M2 Beam HP
Latest versions of Duma’s M² Laser Beam Propagation Analyzer offers the maximum flexibility and superior capabilities of measurement of pulsed or CW beams, from UV to wavelengths over 1.6 microns.
Two versions are offered:
1) Multi-axis knife edge scanning sensor with folded cavity.
2) Camera based sensor using a similar folded cavity. Specially designed for pulsed lasers or CW beams.
Beam sizes up to 25 mm
Wavelengths up to 2.7 microns
Determination of M², waist location and waist diameter.
Low & high power laser beams measurement.
Up to 4 kWatts.
In accordance with latest relevant ISO standards.
Measurements:
Beam Propagation (M²)
Beam Waist Location
Beam Waist Diameter
Divergence
Rayleigh Range
Waist Asymmetry
Astigmatism
Specifications
| Parameters | Values |
|---|---|
| Spectral range | Si: 400 – 1100 nm, InGaAs: 800 – 1800 nm, UV-Enhanced: 190 – 1100 nm |
| Beam Power Range | 100 μW – 1 W (with supplied internal filters for the Si version), 100μW – 5 mW for InGaAs & UV versions |
| Number of Knife-edges | 7 |
| Beam Size | 15 mm diameter with lens (Si & UV versions), 7 mm without lens (Si & UV versions), 3/5 mm diameter without lens (InGaAs ver) |
| Maximum Divergence | 10 mrad (no lens) |
| Beam Waist to Lens Distance | 2 to 2.5 meters optimum, 2 meters minimum |
| Weight | 2.5 Kg (without the Super Beam Analyzer sensor head) |
| Dimensions | 100 x 173 x 415 mm |
| Mounting | M6 or 1/4″ screws |
| Mechanical adjustment | Horizontal angle: ±1.5°, vertical angle: ±1.5° |
| Cable | 2.5 m long |
| Accuracy | Waist positions as measured at the Transformed Waist: V Axis: ±50 μm, W Axis: ±50 μm, Z Axis: ±50 μm, M2 Value: ±10% |
This is a software driver device that interfaces to any host PC computer, running under Windows Vista/XP/2000/7 (32 & 64 bit), via USB port.
Ordering Information
Knife-Edge Versions:
M2Beam-Si: measurement device for silicon range (350 – 1100 nm)
M2Beam-UV: measurement device for silicon range (190 – 1100 nm)
M2Beam-IR: InGaAs measurement device (800 – 1800 nm) , Select IR3/IR5 Sensor
M2Beam-IR3E: InGaAs Enhanced measurement device (1200 – 2700 nm)
Camera Version:
M2Beam-U3*: Measurement device for silicon range (350 – 1100 nm)
*over 1350 nm – consult factory
SAM3-HP-M: beam sampler for high power beams